Electron trap characterization of GaAs grown by the liquid encapsulated czochralski method.

Compensation defects in annealed undoped liquid encapsulated Czochralski InP

Luminescence and scintillation characterization of Silver doped KCl single crystal grown by Czochralski technique for photonic applications

In this study, the scintillation and optical properties of pure and silver doped potassium chloride (KCl:Ag) single crystals were reported. Pure and doped KCl bulk single crystals with a good optical quality and free from cracks were grown from the melt using Czochralski technique. Different analysis methods were used to study the optical and scintillation properties of the grown crystals. The ...

Effect of Multistep Wafer-Annealing on Main Traps in Czochralski-Grown Semi-Insulating GaAs

Characterization of Cu and Ni precipitates in n- and p-type Czochralski-grown silicon by photoluminescence

Photoluminescence (PL) images and micro-PL maps were taken on nand p-type, Cuand Ni-doped monocrystalline silicon wafers, in which the Ni and Cu had precipitated during ingot growth. Markedly different distributions of the precipitates were observed in the nand p-type samples: in the n-type Cu-doped samples, a particle-lean ring structure was observed, dividing the sample into a central region ...

Trap characterization in composite of solid-liquid using dual-level trap model and TSDC method